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FDZ2553NZ
July 2003
FDZ2553NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench(R) BGA MOSFET
General Description
Combining Fairchild's advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2553N minimizes both PCB space and RDS(ON). This common drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON).
Features
* 9.6 A, 20 V. RDS(ON) = 14 m @ V GS = 4.5 V RDS(ON) = 20 m @ V GS = 2.5 V
* Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8. * Ultra-thin package: less than 0.70 mm height when mounted to PCB. * ESD protection diode (note 3) * Outstanding thermal transfer characteristics: significantly better than SO-8. * Ultra-low Qg x RDS(ON) figure-of-merit * High power and current handling capability
Applications
* Battery management * Load switch * Battery protection
D
D S S S
D S
Pin 1
S
G S G
Q2
S S
Q1
S
D
S
D
Pin 1
D
Bottom
Top
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD TJ , TSTG
T A=25oC unless other wise noted
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range
Ratings
20 12 9.6 20 2.1 -55 to +150
Units
V V A W C C/W
Thermal Characteristics
RJA RJB RJ C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1) (Note 1)
60 6.3 0.6
Package Marking and Ordering Information
Device Marking 2553NZ Device FDZ2553NZ Reel Size 7'' Tape width 12mm Quantity 3000 units
(c)2003 Fairchild Semiconductor Corporation
FDZ2553NZ Rev C (W)
FDZ2553NZ
Electrical Characteristics
Symbol
BV DSS BVDSS TJ IDSS IGSS V GS(th) VGS(th) TJ RDS(on)
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
V GS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C V DS = 16 V, V GS = 12 V, V GS = 0 V V DS = 0 V
Min
20
Typ Max Units
V mV/C 1 10 A A V mV/C m
Off Characteristics
12
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
V DS = V GS , ID = 250 A ID = 250 A, Referenced to 25C V GS = 4.5 V, ID = 9.6 A V GS = 2.5 V, ID = 7.9 A V GS = 4.5 V, ID = 9.6 A, TJ =125C V GS = 4.5 V, V DS = 5 V V DS = 5 V, ID = 9.6 A
0.6
0.9 -0.3 12 16 16 20 45 1240 320 170 2.1
1.5
14 20 24
ID(on) gFS Ciss Coss Crss RG
10
A S pF pF pF 20 26 42 19 18 ns ns ns ns nC nC nC 1.7 1.2 A V nS nC
Dynamic Characteristics
V DS = 10 V, f = 1.0 MHz V GS = 0 V,
V GS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd IS V SD trr Qrr
Notes:
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
V DD = 10 V, V GS = 4.5 V,
ID = 1 A, RGEN = 6
10 14 26 11
V DS = 10 V, V GS = 5 V
ID = 9.6 A,
13 3 3
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = 1.7 A Voltage Diode Reverse Recovery Time IF = 9.6A, diF/dt = 100 A/s Diode Reverse Recovery Charge
(Note 2)
0.7 20 6
1. RJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the sol der ball, RJB, is defined for reference. For RJC , the thermal reference point for the case is defined as the top surface of the copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user's board design. (a). RJA = 60C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b). RJA = 108C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDZ2553NZ Rev C (W)
FDZ2553NZ
Dimensional Outline and Pad Layout
FDZ2553NZ Rev C (W)
FDZ2553NZ
Typical Characteristics
20
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS =4.5V 2.0V
ID, DRAIN CURRENT (A)
16 3.5V 12 2.5V
1.75
VGS = 2.5V
1.5
3.0V 3.5V
8
1.25
4.0V 4.5V
4
1.5V
0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V)
1 0 4 8 12 16 20 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.035 RDS(ON) , ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 9.6A VGS = 10V 1.4
ID =4.8 A
0.025
1.2
1
TA = 125 C
0.015
o
0.8
T A = 25 C
o
0.6 -50
0.005
-25
0
25
50
75
100
o
125
150
0
2
4
6
8
10
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
20
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A) 16
o
VGS = 0V 10 1 0.1 0.01 0.001 0.0001
1 1.5 2 2.5
o
12
TA = 125 C
25 C
o
T A = 125 C
o
25 C -55 C
o
8
-55 C
o
4
0 0.5
0
0.2
0.4
0.6
0.8
1
VGS , GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDZ2553NZ Rev C (W)
FDZ2553NZ
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 9.6A 8 VDS = 5V 10V 15V
1800 f = 1MHz VGS = 0 V CAPACITANCE (pF) 1200 Ciss
6
4
600
Coss
2 Crss 0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 1ms 10ms 100ms 1s 1 VGS = 4.5V SINGLE PULSE o RJ A = 108 C/W TA = 25 C 0.01 0.01
o
Figure 8. Capacitance Characteristics.
50 P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10
40
SINGLE PULSE RJA = 108C/W T A = 25C
30
10s DC
20
0.1
10
0
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1 , TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA (t) = r(t) * RJA RJA = 108 C/W
0.05 0.02
0.1
0.1
P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.01
0.001 0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDZ2553NZ Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
ImpliedDisconnectTM PACMANTM POPTM ISOPLANARTM Power247TM LittleFETTM PowerTrench MicroFETTM QFET MicroPakTM QSTM MICROWIRETM QT OptoelectronicsTM MSXTM Quiet SeriesTM MSXProTM RapidConfigureTM OCXTM RapidConnectTM OCXProTM SILENT SWITCHER OPTOLOGIC SMART STARTTM OPTOPLANARTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TruTranslationTM UHCTM UltraFET VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I3

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